Samsung starts mass production of 3rd generation 256-gigabit (Gb) 3D Vertical NAND (V-NAND) flash memory based on 48 layers of 3-bit multi-level-cell (MLC) arrays for SSD use.
The announcement takes place just a week after the revelation of 256Gb 48-layer BiCS 3D NAND flash from Toshiba and Samsung.
In any case, cording to Samsung 256Gb 3rd generation 3D V-NAND doubles the density of conventional 128Gb NAND flash chips by enabling up to 32GB of memory storage on a single die, making it ideal for use in multi-terabyte SSDs.
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