Toshiba announces the development of next generation 4-bit-per-cell quadruple-level cell (QLC) 3D flash memory-- allowing it to produce "the world's largest die capacity" at 768Gb (96GB).
In comparison, 3-bit triple-level cell (TLC) 3D flash maxes out at 512Gb.
The technology involves a 64-layer stacked cell structure, and allows the creation of a 1.5TB device with a 16-die stacked architecture in a single package, making another capacity record. This represents a 50% increase in capacity per package, at least when compared to an earlier Toshiba device with 1TB capacity via 16-die stacked architecture in a single package.
Creating such a device poses a number of challenges, since increasing the number of bits-per-cell by one within the same electron count requires twice the accuracy of TLC technology.
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